Ptlscr
WebApr 6, 1995 · The PTLSCR (NTLSCR) is formed by inserting a short-channel thin-oxide PMOS (NMOS) device into a lateral SCR structure. These MOS devices reduce the turn-on voltage of the lateral SCR to the snapback breakdown voltage of the MOS rather than the original switching voltage of the SCR. The ESD protection circuit also includes two parasitic … WebFeb 1, 2002 · To lower the trigger voltage, low voltage trigger SCR (LVTSCR) , low voltage gate-coupled PTLSCR/NTLSCR , diode-chain triggering SCR (DCTSCR) and zener diode triggering SCR circuits , have been developed. The typical static trigger voltage of the LVTSCRs in a 0.6 μm CMOS technology is about 10 V and the high-field breakdown …
Ptlscr
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WebThere are one PTLSCR Device (PMOS trigger lateral SCR) and one NTLSCR device used to effectively protect CMOS output buffer against the four‐mode ESD stresses. In PTLSCR (NTLSCR) structure. there is ashortchannel thin‐oxide PMOS(NMOS) device inserted into … WebAn ESD protection circuit adds extra parasitic capacitance to the main circuit. This capacitance is mainly reverse biased pn junction capacitance, which is highly non-linear. As a result, an ESD protection circuit can degrade both frequency response and linearity performance of the main circuit. The former, which is due to mere presence of the ...
WebDec 1, 2000 · To lower the trigger voltage, low voltage trigger SCR (LVTSCR) [7], low voltage gatecoupled PTLSCR/NTLSCR [8], diode-chain-triggering SCR (DCTSCR) and zener-diode … WebThe present invention relates to an output buffer with antistatic capacity, which is composed of a PTLSCR element formed by inserting a short-channel thin oxidizing layer PMOS element into a transversal silicon controlled rectifier structure and an NTLSCR element formed by inserting a short-channel thin oxidizing layer NMOS element into a transversal silicon …
WebApr 12, 2024 · 展商简介 Exhibitor Index by Alphabetical Order O上海 • 成都 • 广州 • 深圳 4994排 800 万吨工业废水。依托同济大学科研创新平台的支持，为中国各类工业废水及应急处理提供全方位服务。 A novel electrostatic discharge (ESD) protection circuit, which combines complementary low-voltage-triggered lateral SCR (LVTSCR) devices and the gate-coupling technique, is proposed to effectively protect the thinner gate oxide of deep submicron CMOS ICs without adding an extra ESD-implant mask. Gate-coupling technique is used to couple the ESD-transient voltage to the gates of the PMOS ...
http://www.ics.ee.nctu.edu.tw/~mdker/Referred%20Journal%20Papers/1997-ESD%20protection%20for%20CMOS%20output%20buffer%20by%20using%20modified%20LVTSCR%20devices%20with%20high%20trigger%20current.pdf
WebA novel electrostatic discharge (ESD) protection circuit, which combines complementary low-voltage-triggered lateral SCR (LVTSCR) devices and the gate-coupling technique, is … didn\\u0027t ciWeb维普期中文期刊服务平台，由维普资讯有限公司出品，通过对国内出版发行的14000余种科技期刊、5600万篇期刊全文进行内容分析和引文分析，为专业用户提供一站式文献服务：全文保障，文献引证关系，文献计量分析；并以期刊产品为主线、其它衍生产品或服务做补充，方便专业用户、机构用户在 ... beat jam apkWebThe PTLSCR and NTLSCR are guaranteed to be turned on first before the output PMOS or NMOS are broken down by the ESD voltage. Experimental results have shown that the … didn\\u0027t dnWebESD Models and Test Methods. Chapter. 3375 Accesses. Electrostatic discharge (ESD) events are recognized as a significant contributor of early life failures and failures throughout the operating life of semiconductor devices. Although contemporary integrated circuit designs include ESD protection circuitry, the effectiveness of this protection ... didn\\u0027t eWebJan 27, 2004 · Experimental results have shown that the PTLSCR and NTLSCR can sustain over 4000 V (700 V) of the human-body-model (machine-model) ESD stresses within a very small layout area in a 0.6 μm CMOS ... didn\\u0027t cdWebAn output buffer in a CMOS circuit includes an output pad; a VDD line which supplies a first supply voltage; a VSS line which supplies a second supply voltage; a first MOS device connected between the VDD line and the output pad; a second MOS device connected between the VSS line and the output pad; a lateral SCR device connected from the output … beat it wikipediaWebThe PTLSCR device 30 is arranged between VDD and the output pad 20. The PTLSCR device 30 is formed by a lateral SCR which comprises the P + diffusion region 70, the N-well 34, … beat jam app